TR-2020 High Power Thermal Resistance Tester

Category:

High Power Thermal Resistance Test System TR-2020

shanghai@junotester.com

Product Description

1、Summary

The thermal resistance characteristic (θjc) of the transistor is measured as the temperature change (ΔmV) of the PN junction, compared with the specified value, and classified while displaying VF1 and ΔVF on the front panel. In addition, the tester includes a contact check function and an oscillation detection function to prevent contact failure between the test terminals and erroneous measurement due to oscillation during measurement. Therefore, these functions provide a highly reliable test system.

The TR-2020 is designed for both manual and automated testing using a processor to evaluate a wide range of devices such as small signal to high power PNP, NPN transistors (including Darlington), N-MOS FET, P-MOS FET and IGBT. In addition to thermal resistance applications such as evaluating die attach, the tester can also be used to obtain data to determine SOA (Safe Operating Area).

2、Features

● Simultaneous display of VBE1 (VSDl) and ΔVBE (ΔVSD)

● Special contact check function prevents measurement errors and mis-installation due to poor contact

● Oscillation detection function prevents measurement errors and misclassification due to oscillation

● The GATE LIMIT voltage of MOS-FET can be set, and the built-in device protection circuit prevents damage due to overheating

● The tester can be externally controlled via RS-232C I/F

● The tester can be connected to an automatic classifier (processor)

● TR-2020 can be mounted in a 19-inch (wide) rack

● The system has 2 workstations (2 switching functions)

3、Specifications

Measuring range

l) Polarity NPN/PNP, N-MOS FET/P-MOS FET, N-DIODE/P-DIODE N-IGBT (GE)/P-IGBT (GE), N-IGBT (CE)/P-IGBT (CE), SCRⅠ/SCRⅢ

2) Contact check before test, open/short check between terminals

3) Measuring range VBE1/VSD1/VCE1/VF1 0000.0mV～3200.0mV

ΔVBE/ΔVSD/ΔVCE/ΔVF/ΔVT 000.0mV～999.9mV (accuracy: ±2% or 0.3mV, whichever is greater)

VGE1 0000mV～9999mV

ΔVGE0000mV～l999mV (accuracy: ±2% or 3mV, whichever is greater)

4) Measuring time PT TIME + 20ms (setting value change: forced time (PT) + 70ms) (per station) Setting range

4、Test range and accuracy

project	scope	Accuracy	Setting Value
Emitter Forcing Current IE/ID	0.01A～39.90A	±(1%+2mA)	4 (Upper three digits are effective)
Measurement Current IM	01mA～99mA	01mA～99mA ±(1%+0.2mA)	2
GATE LIMIT Voltage GATE-L (IG current[ΔVT])	01.0V～19.9V 0.1mA～39.9mA	±0.5V ±(1%+0.2mA)	3
Power Forcing Time PT	100μs～999ms	±(0.1%+10μs)	3+Exponents
Delay Time DT	10μs～999μs	±1μs ±(0.1%+1μs)	3
LOWER GATE UPPER GATE	000.0mV～999.9mV ΔVGE:0000mV～1999mV	DIGITAL COMPARATE	4
VCB/VDS	1V～199V	±(0.2%+0.2V)	3

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