1、Describe
1.When testing leakage current and withstand voltage projects, this option can achieve a maximum voltage of 3KV. This option must be connected to the DTS-1000 tester for use.
2、Connection

3、Specification
Voltage/Current
|
3000V/10mA
|
Test Devices
|
Transistors, Diode, Zener Diode, MOS-FET, J-FET
|
System Station
|
Max Two Station
|
Relay action time
|
5ms
|
Size
|
DHV-1000 500(W)×670(D)×250(H)mm
VHD-1000 116(W)×305(D)×272(H)mm
|
Input Power Voltage
|
AC200V to AC240V 50Hz/60Hz
|
Power consumption
|
400VA
|
Use conditions: Temperature:25℃±5℃. Humidity:Below 60%
4、Test item List (Measurement Range &Accuracy)
● Transistor
Test Item
|
ITEM NAME
|
Measurement Range & Accuracy
|
Forcing Range & Accuracy
|
Leakage
|
HVICEO(S)
|
000.0nA~9.999mA ±1%+2digit
|
HV:
|
Current
|
HVICBO(S)
|
|
100V~ 3.00KV ±1%+0.2V
|
|
HVIEB
|
|
|
Breakdown
|
HBVCEO(S)
|
000.0V~3.000KV ±1%+2digit
|
Current:
|
Voltage
|
HBVCBO(S)
|
|
100nA~ 9.99mA ±1%+3nA
|
|
HBVEB
|
|
VMAX:
|
|
|
|
0.00KV~ 3.00KV 10%+2V
|
● FET
Test Item
|
ITEM NAME
|
Measurement Range & Accuracy
|
Forcing Range&Accuracy
|
Leakage |
HVIDSO(S)
|
000.0nA~9.999mA ±1%+2digit
|
HV:
|
Current |
HVIDGO(S)
|
|
100V~ 3.00KV ±1%+0.2V
|
|
HVISG
|
|
|
Breakdown
|
HBVDSO(S)
|
000.0V~3.000KV ±1%+2digit
|
Current:
|
Voltage
|
HBVDGO(S)
|
|
100nA~ 9.99mA ±1%+3nA
|
|
HBVSG
|
|
VMAX:
|
|
|
|
0.00KV~ 3.00KV 10%+2V
|
● DIODE
Test Item
|
ITEM NAME
|
Measurement Range & Accuracy
|
Forcing Range&Accuracy
|
Leakage |
HVIR
|
000.0nA~9.999mA ±1%+2digit
|
HV:
|
Current |
|
|
100V~ 3.00KV ±1%+0.2V
|
Breakdown
|
HVZ
|
000.0V~3.000KV ±1%+2digit
|
Current:
|
Voltage
|
|
|
100nA~ 9.99mA ±1%+3nA
|
|
|
|
VMAX:
|
|
|
|
0.00KV~ 3.00KV 10%+2V
|
● SCR
Test Item
|
ITEM NAME
|
Measurement Range & Accuracy
|
Forcing Range&Accuracy
|
Leakage |
HVIDRM(S)
|
000.0nA~9.999mA ±1%+2digit
|
HV:
|
Current |
|
|
100V~ 3.00KV ±1%+0.2V
|
Breakdown
|
HVDRM(S)
|
000.0V~3.000KV ±1%+2digit
|
Current:
|
Voltage
|
HVRGM(S)
|
|
100nA~ 9.99mA ±1%+3nA
|
|
|
|
VMAX:
|
|
|
|
0.00KV~ 3.00KV 10%+2V
|